| 摘要 |
Provided are a high-yield and high-reliability coreless wiring substrate, a semiconductor device, and methods for manufacturing same. A coreless wiring substrate (11) comprises multiple wiring layers and insulating layers which are stacked, wires (17, 20, 23) provided in the wiring layers, vias (16, 19, 22) provided in the insulating layers and electrically connecting the wires disposed thereon and thereunder, wherein first electrode terminals (14) are provided on a first surface, second electrode terminals (23) are provided on a surface on the reverse side, and the pitch between pads of the first electrode terminals (14) is narrower than the pitch between pads of the second electrode terminals (23). Electric continuity is established between the first electrode terminal (14) and the second electrode terminal (23) via at least one of the wires or the vias, and at least one of the wires or the vias has a cross-sectional shape different from that of the via or the wire provided in another insulating layer or wiring layer. |
