| 发明名称 |
Method of manufacturing OLED-on-silicon |
| 摘要 |
A method of manufacturing an Organic Light Emitting Diode (OLED). A substrate (101) is provided, and a plurality of pixel electrodes (102) is formed on the substrate resulting in at least one gap (105) between two adjacent pixel electrodes. A dielectric material (103) is deposited in the gap. The resulting structure is subjected to a process which ensures that at least a portion of the surface of the pixel electrodes is not covered by the dielectric material. At least the portion of the surface of the pixel electrodes is covered with a layer of an organic compound so as to form the OLED. |
| 申请公布号 |
US8741676(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US200913264209 |
申请日期 |
2009.04.16 |
| 申请人 |
X-FAB Semiconductor Foundries AG |
发明人 |
Zhang Dong;Koo Sang Sool |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing an Organic Light Emitting Diode (OLED) comprising:
providing a substrate; forming a plurality of pixel electrodes on the substrate resulting in at least one gap between two adjacent pixel electrodes; depositing a dielectric material in the gap; subjecting the resulting structure to an etching process which ensures that at least a portion of the surface of said pixel electrodes is not covered by said dielectric material, wherein the resulting structure is patterned before subjecting it to the etching; and covering at least said portion of said surface of said pixel electrodes with a layer of an organic compound so as to form said OLED; wherein depositing the dielectric material in the gap comprises depositing the dielectric material over the pixel electrodes as well; further comprising a polishing step between the depositing of the dielectric material in the gap and the subjecting the resulting structure to said process, the polishing step comprising chemical mechanical polishing (CMP); wherein the patterning comprises applying a mask over the dielectric layer, the mask substantially covering said gap and leaving a space over said pixel electrodes, and the method comprises removing the mask over the dielectric layer substantially covering said gap prior to covering at least said portion of said surface of said pixel electrodes with the layer of the organic material.
|
| 地址 |
DE |
