| 发明名称 |
III nitride epitaxial substrate and deep ultraviolet light emitting device using the same |
| 摘要 |
A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate includes a substrate, an AlN buffer layer, a first superlattice laminate, a second superlattice laminate and a III nitride laminate in this order. The III nitride laminate includes an active layer including an AlαGa1-αN (0.03≦α) layer. The first superlattice laminate includes AlaGa1-aN layers and AlbGa1-bN (0.9<b≦1) layers which are alternately stacked, where α(alpha)<a and a<b. The second superlattice laminate includes repeated layer sets each having an AlxGa1-xN layer, an AlyGa1-yN layer, and an AlzGa1-zN (0.9<z≦1) layer, where α(alpha)<x and x<y<z. |
| 申请公布号 |
US8742396(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201313739362 |
申请日期 |
2013.01.11 |
| 申请人 |
Dowa Electronics Materials Co., Ltd. |
发明人 |
Ooshika Yoshikazu |
| 分类号 |
H01L29/12;H01L29/66 |
主分类号 |
H01L29/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A III nitride epitaxial substrate comprising:
a substrate; an AlN buffer layer formed on the substrate; a first superlattice laminate and a second superlattice laminate sequentially formed on the buffer layer; and a III nitride laminate having an active layer including an AlαGa1-αN (0.03≦α(alpha)) layer epitaxially grown on the second superlattice laminate, wherein: the first superlattice laminate includes a first layer made of AlaGa1-aN and a second layer made of AlbGa1-bN (0.9≦b≦1) which are alternately stacked, where α(alpha)<a and a<b: hold, and the second superlattice laminate includes repeated layer sets each layer set having a third layer made of AlxGa1-xN (0.20≦x≦0.90), a fourth layer made of AlyGa1-yN (0.60≦y≦0.95), and a fifth layer made of AlzGa1-zN (0.9<z≦1), where α(alpha)<x and x<y<z, and y−x is smaller than z−y, and the bottom most layer of the second superlattice laminate is the third layer.
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| 地址 |
Tokyo JP |
