| 发明名称 |
Semiconductor memory device |
| 摘要 |
A semiconductor memory device includes a switching unit coupled between a local sense amplifier and a bit line sense amplifier and configured to be turned on in response to a switching signal which is enabled in synchronization with an enable signal for enabling the local sense amplifier and disabled at a time point where a preset period passes after a first power for enabling the bit line sense amplifier is precharged. |
| 申请公布号 |
US8743639(B2) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201213494798 |
申请日期 |
2012.06.12 |
| 申请人 |
SK Hynix Inc. |
发明人 |
Jang Woong Ju;Lim Kyu Nam |
| 分类号 |
G11C7/00;G11C7/02;G11C5/14 |
主分类号 |
G11C7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising a switching unit coupled between a local sense amplifier and a bit line sense amplifier and configured to be turned on in response to a switching signal which is enabled in synchronization with an enable signal for enabling the local sense amplifier and disabled at a time point where a preset period passes after a first power for enabling the bit line sense amplifier is precharged.
|
| 地址 |
Gyeonggi-do KR |
