Methods of manufacturing three-dimensional semiconductor devices

摘要

Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.

主权项

1. A method of manufacturing a three-dimensional semiconductor device, the method comprising:
forming a first stack structure on a substrate; forming a first opening passing through the first stack structure; forming a first spacer on a sidewall of the first stack structure inside the first opening; forming a sacrificial filling pattern to fill the first opening; forming a second stack structure on the first stack structure; forming a second opening passing through the second stack structure to expose the sacrificial filling pattern; forming a second spacer on a sidewall of the second stack structure inside the second opening; removing the sacrificial filling pattern; and removing the first and second spacers.