Methods of forming pillars for memory cells using sequential sidewall patterning

摘要

The present invention provides apparatus, methods, and systems for fabricating memory structures methods of forming pillars for memory cells using sequential sidewall patterning. The invention includes forming first features from a first template layer disposed above a memory layer stack; forming first sidewall spacers adjacent the first features; forming second features that extend in a first direction in a mask layer by using the first sidewall spacers as a hardmask; depositing a second template layer on the mask layer; forming third features from the second template layer; forming second sidewall spacers adjacent the third features; and forming fourth features that extend in a second direction in the mask layer by using the second sidewall spacers as a hardmask. Numerous additional aspects are disclosed.

主权项

1. A method of forming a mask for patterning a memory array, comprising:
forming first line features from a first template layer disposed above a memory layer stack; forming first sidewall spacers adjacent the first line features; forming second line features that extend in a first direction in a mask layer by using the first sidewall spacers as a hardmask; depositing a second template layer on the mask layer; forming third line features from the second template layer that extend in a second direction perpendicular to the first direction; forming second sidewall spacers adjacent the third line features; and forming an array of pillar features in the mask layer by using the second sidewall spacers as a hardmask.