| 发明名称 |
Write pre-compensation for nonvolatile memory |
| 摘要 |
A system including an interference module and a programming module. The interference module is configured to generate interference values based on (i) a state to which a memory cell is to be programmed and (ii) states of one or more memory cells located near the memory cell, and store the interference values. The interference values indicate effects of the states of the one or more memory cells on the state to which the memory cell is to be programmed. The programming module is configured to determine a programming value to program the memory cell to the state based on one or more of the interference values. |
| 申请公布号 |
US8743616(B1) |
申请公布日期 |
2014.06.03 |
| 申请号 |
US201313747114 |
申请日期 |
2013.01.22 |
| 申请人 |
Marvell International Ltd. |
发明人 |
Wu Zining;Yang Xueshi;Sutardja Pantas |
| 分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A system, comprising:
an interference module configured to
generate interference values based on (i) a state to which a memory cell is to be programmed and (ii) states of one or more memory cells located near the memory cell, andstore the interference values,wherein the interference values indicate effects of the states of the one or more memory cells on the state to which the memory cell is to be programmed; and a programming module configured to determine a programming value to program the memory cell to the state based on one or more of the interference values.
|
| 地址 |
Hamilton BM |
