Semiconductor device having vertically offset bond on trace interconnects on recessed and raised bond fingers

摘要

A semiconductor device includes a substrate, a first recessed conductive layer embedded and recessed into a first surface of the substrate, and a first raised conductive layer disposed above the first surface. A first vertical offset exists between an upper surface of the first recessed conductive layer and an upper surface of the first raised conductive layer. The device includes a second recessed conductive layer embedded and recessed into a second surface of the substrate. The second surface of the substrate is opposite the first surface. The device includes a second raised conductive layer disposed beneath the second surface and an interconnect structure disposed on the first recessed and raised conductive layers and the second recessed and raised conductive layers. A second vertical offset exists between a lower surface of the second recessed conductive layer and a lower surface of the second recessed conductive layer.

主权项

1. A semiconductor device, comprising:
a substrate; a first conductive layer embedded in a first surface of the substrate; a second conductive layer extending above the first surface of the substrate to create a vertical offset between the first conductive layer and second conductive layer; a first interconnect structure formed over the first conductive layer; and a second interconnect structure formed over the second conductive layer and overlapping the first interconnect structure with separation between the second interconnect structure and the first interconnect structure.