Oxide based memory with a controlled oxygen vacancy conduction path

摘要

Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming a substoichiometric oxide over the first conductive element, forming a second conductive element over the substoichiometric oxide, and oxidizing edges of the substoichiometric oxide by subjecting the substoichiometric oxide to an oxidizing environment to define a controlled oxygen vacancy conduction path near a center of the oxide.

主权项

1. An oxide based memory cell, comprising:
a first conductive element; a substoichiometric oxide on the first conductive element; and a second conductive element directly on the substoichiometric oxide; wherein the memory cell includes a controlled oxygen vacancy conduction path near a center of the substoichiometric oxide.