NITRIDE BASED SEMICONDUCTOR DEVICE EMPLOYING TAN-SCHOTTKY CONTACT AND METHOD FOR MANUFACTURING THEREOF

摘要

Disclosed is a method of manufacturing nitride based semiconductor. The manufacturing method according to the present invention includes a step of forming a nitride based semiconductor layer containing GaN on the surface, a step of forming a mesa structure by performing a mesa process on a nitride based semiconductor; and a step of forming a schottky contract including TaN on the mesa structure.