| 摘要 |
(Task) provided is a transparent conductive film with improved crystallinity and reduced specific resistance. (Solution) The transparent conductive film (1) of the present invention includes a film base (2), and a polycrystalline layer (3) of indium tin oxide formed on the film base(2). The polycrystalline layer (3) has a gradient of a density of tin oxide in a thickness direction thereof. A maximum value of the density of tin oxide in the thickness direction of the polycrystalline layer (3) is 6 wt% to 12 wt%. The polycrystalline layer (3) has a total thickness of 10 nm to 35 nm. An average value of maximum sizes of crystal grains composing the polycrystalline layer (3) is 380 nm to 730 nm. |
