| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for analyzing a crystal defect of a semiconductor specimen that is able to accurately identify a position where a crystal defect exists.SOLUTION: A method for analyzing a crystal defect of a semiconductor specimen obtains a transmission electron microscope image reflecting a crystal defect 2 and an optical intensity mapping image indicating a boundary position between a semiconductor substrate 1a and an epitaxial layer 1b by transmission electron microscope observation and Raman spectroscopic measurement, and creates a composite image by overlapping them. The method identifies which place the crystal defect 2 exists in, the semiconductor substrate 1a or the epitaxial layer 1b, from the composite image. This enables exact identification of the position where the crystal defect exists. |
