| 摘要 |
<p>864,004. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Dec. 3,1959 [Dec. 4, 1958], No. 39184/58. Class 37. An hermetically-sealed rectifier has a wafer of semi-conducting material in the bottom of a cup joined at its flanged rim to a similar flanged rim of another cup, a lead which makes connection to the wafer passing through a tube sealed in vitreous material in the base of the other cup. In the arrangement shown in Fig. 1 a wafer 4 of germanium is soldered to the base of cup 2 which is of a cobalt-nickel iron alloy and which carries a butt-welded conductor 7, by a lead-tin eutectic solder containing 1% by weight of antimony. A pellet 10 of indium is alloyed to the germanium at about 500‹ C. to form the junction and a nickel wire 6 is fused to conductor 10. Cup 1 which contains a seal 9 of a borosilicate glass whose coefficient of expansion is compatible with that of the cup is presented to the lower cup so that nickel wire 6 passes through nickel tube 8. The flanges of the two cups are resistance-welded together at 3 and tube 8 pinched off to seal the housing. In a further embodiment (Fig. 3) where the whole device is so small that threading the conductor through tube 8 would be difficult, a flat headed pin 6 is used instead of conductor 1. The head of the pin is coated with an indium tin alloy (50: 50 by weight). Initially the two housings are sealed together with cup 1 below cup 2 so that the head of the pin rests on tube 8. The arrangement is then inverted so that the head of the pin contacts the indium pellet. Further heating to 150‹ C. solders them together and tube 8 is then pinched off. The Specification states that the rectifier may be silicon instead of germanium and that instead of the glass filling shown in cup 1, a small glass bead may be provided in the base of the cup.</p> |
