发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
摘要 [Object] To provide a composition enabling to form a fine negative photoresist pattern free from troubles, such as, surface roughness, bridge defects, and resolution failure; and also to provide a pattern formation method using that composition. [Means to Solve the Problem] A fine pattern-forming composition is used for miniaturizing a resist pattern by fattening said pattern in a process of formation of a negative resist pattern using a chemically amplified resist composition. The fine pattern-forming composition comprises a polymer comprising a repeating unit having a structure of the following formula (A), (B) or (C): and a solvent. This composition is cast on a negative resist pattern obtained by development with an organic solvent developer, and then heated to form a fine pattern.
申请公布号 SG11201400460W(A) 申请公布日期 2014.05.29
申请号 SG11201400460W 申请日期 2012.10.10
申请人 AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. 发明人 OKAYASU TETSUO;SEKITO TAKASHI;ISHII MASAHIRO
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
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