| 发明名称 |
MgO TARGET FOR SPUTTERING |
| 摘要 |
Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering. |
| 申请公布号 |
US2014144775(A1) |
申请公布日期 |
2014.05.29 |
| 申请号 |
US201214130438 |
申请日期 |
2012.06.29 |
| 申请人 |
SANO SATORU;NISHIMURA YOSHIHIRO;WATANABE TAKAYUKI;KATOU YUUZOU;UEKI AKIRA;MITOMI SHINZO;TAKASU MASANOBU;HARA YUSUKE;TANAKA TAKAAKI;NIPPON TUNGSTEN CO., LTD.;UBE MATERIALS INDUSTRIES, LTD. |
发明人 |
SANO SATORU;NISHIMURA YOSHIHIRO;WATANABE TAKAYUKI;KATOU YUUZOU;UEKI AKIRA;MITOMI SHINZO;TAKASU MASANOBU;HARA YUSUKE;TANAKA TAKAAKI |
| 分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
| 代理机构 |
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