发明名称 |
ELECTRONIC DEVICE COMPRISING A CONDUCTIVE STRUCTURE AND AN INSULATING LAYER WITHIN A TRENCH |
摘要 |
An electronic device can include a semiconductor layer overlying a substrate and having a primary surface and a thickness, wherein a trench extends through at least approximately 50% of the thickness of semiconductor layer to a depth. The electronic device can further include a conductive structure within the trench, wherein the conductive structure extends at least approximately 50% of the depth of the trench. The electronic device can still further include a vertically-oriented doped region within the semiconductor layer adjacent to and electrically insulated from the conductive structure; and an insulating layer disposed between the vertically-oriented doped region and the conductive structure. A process of forming an electronic device can include patterning a semiconductor layer to define a trench extending through at least approximately 50% of the thickness of the semiconductor layer and forming a vertically-oriented doped region after patterning the semiconductor layer to define the trench. |
申请公布号 |
US2014145256(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201414171427 |
申请日期 |
2014.02.03 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
VENKATRAMAN PRASAD;GRIVNA GORDON M.;LOECHELT GARY H. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|