发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE |
摘要 |
A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60μm. |
申请公布号 |
US2014145223(A1) |
申请公布日期 |
2014.05.29 |
申请号 |
US201414170675 |
申请日期 |
2014.02.03 |
申请人 |
ROHM CO., LTD. |
发明人 |
HOSOMI TADAHIRO;MINESHITA KENTARO |
分类号 |
H01L33/10;H01L33/00;H01L33/30 |
主分类号 |
H01L33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|