发明名称 |
Method of fabricating a CIGSS solar cell |
摘要 |
<p>A method of fabricating solar cell is provided according to one or more embodiments. According to an embodiment, the method of fabricating solar cell includes forming a back electrode layer formed on a substrate, forming a light absorbing layer on the back electrode layer, and forming a transparent electrode layer on the light absorbing layer, wherein the light absorbing layer is comprised of copper (Cu), gallium (Ga), indium (In), sulfur (S), and selenium (Se) and includes a first concentration region in which concentrations of sulfur (S) gradually decrease in the light absorbing layer going in a first direction going from the back electrode layer toward a transparent electrode layer, and wherein the forming of the light absorbing layer comprises forming a first precursor comprised of copper (Cu), gallium (Ga) and indium (In) on the back electrode layer, forming a first compound layer by performing a first heat treatment to the first precursor using a sulfur (S) containing gas, forming a second precursor comprised of copper (Cu), gallium (Ga) and indium (In) on the first compound layer, and forming the light absorbing layer by performing a second heat treatment to the first compound layer and the second precursor using a selenium (Se) containing gas.
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申请公布号 |
EP2202804(A3) |
申请公布日期 |
2014.05.28 |
申请号 |
EP20090015528 |
申请日期 |
2009.12.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;SAMSUNG SDI CO., LTD. |
发明人 |
JUN, GUG-IL;LEE, WOO-SU;KIM, DONG-SEOP;KIM, JIN-SEOCK;KIM, BYOUNG-DONG;LEE, KANG-HEE;AHN, DONG-GI;LEE, BYUNG-JOO;PARK, HYOUNG-JIN;KIM, IN-KI |
分类号 |
H01L31/032;C23C14/06;C23C14/58;H01L31/0392;H01L31/065;H01L31/18 |
主分类号 |
H01L31/032 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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