| 摘要 |
<p>The apparatus has a bidirectional hetero-junction field-effect power transistor including a semiconductor layer (4) formed on another semiconductor layer (6). A reference electrode is embedded in the latter semiconductor layer, where a distance between the reference electrode and a conduction electrode (E1) is between 45% and 55% of distance between the conduction electrode and another conduction electrode (E2). A control circuit (9) generates a switching voltage for switching a transistor (1) from a voltage of the reference electrode and applies a control voltage to a gate. The dopant implant is doped with a dopant chosen from a group consisting of Mg, silicon, zinc, chromium, and iron. The latter semiconductor layer is an III-V type group-III nitride semiconductor layer, made of a binary nitride alloy such as gallium nitride alloy. The former semiconductor layer is made of a ternary nitride alloy such as aluminum gallium nitride alloy. The bidirectional hetero-junction field-effect power transistor is a high electron mobility transistor. The reference electrode is a dopant implant (7).</p> |
