SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device may include first conductive layers which are alternately stacked and first interlayer dielectrics; at least one second interlayer dielectric and at least one conductive layer which are formed on the upper part of the first interlayer dielectrics and the first conductive layers; a first semiconductor layer which penetrates the first conductive layers and the first interlayer dielectrics and includes polysilicon; and a second semiconductor layer which is connected to the first semiconductor layer, penetrates the first conductive layer and the second interlayer dielectric, and includes silicon germanium.