发明名称 ESD DEVICES COMPRISING SEMICONDUCTOR FINS
摘要 A device includes a semiconductor substrate, and an insulating region which is extended from the uppermost surface of the semiconductor substrate to the inner part of the semiconductor substrate. The device further includes a first node, a second node, and an electrostatic discharge (ESD) device which is connected between the first node and the second node. The ESD device is adjacent to the upper part of the uppermost surface of the insulating region and includes a semiconductor fin. The ESD device responds to ESD transient on the first node to transmit a current from the first node to the second node.
申请公布号 KR20140063370(A) 申请公布日期 2014.05.27
申请号 KR20130028597 申请日期 2013.03.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TSAI TSUNG CHE;CHANG YI FENG;LEE JAM WEM
分类号 H01L27/04 主分类号 H01L27/04
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