发明名称 |
Semiconductor device manufacturing method and computer-readable storage medium |
摘要 |
There is provided a semiconductor device manufacturing method for forming a step-shaped structure in a substrate by etching the substrate having thereon a multilayer film and a photoresist film on the multilayer film and serving as an etching mask. The multilayer film is formed by alternately layering a first film having a first permittivity and a second film having a second permittivity different from the first permittivity. The method includes a first process for plasma-etching the first film by using the photoresist film as a mask; a second process for exposing the photoresist film to hydrogen-containing plasma; a third process for trimming the photoresist film; and a fourth process for etching the second film by using the trimmed photoresist film and the plasma-etched first film as a mask. The step-shaped structure is formed in the multilayer film by repeatedly performing the first process to the fourth process in this sequence. |
申请公布号 |
US8735299(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213410512 |
申请日期 |
2012.03.02 |
申请人 |
WATANABE SEIICHI;SATO MANABU;NARISHIGE KAZUKI;SATO TAKANORI;KATSUNUMA TAKAYUKI;TOKYO ELECTRON LIMITED |
发明人 |
WATANABE SEIICHI;SATO MANABU;NARISHIGE KAZUKI;SATO TAKANORI;KATSUNUMA TAKAYUKI |
分类号 |
H01L21/302 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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