发明名称 CLEANING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM
摘要 A method of cleaning an inside of a processing chamber is provided according to an embodiment of the present disclosure. The method includes supplying a fluorine-based gas and a nitrogen oxide-based gas as the cleaning gas, into the processing chamber heated to a first temperature, and removing a deposit by a thermochemical reaction. The method further includes changing a temperature in the processing chamber to a second temperature higher than the first temperature, and supplying the fluorine-based gas and the nitrogen oxide-based gas as the cleaning gas, and removing extraneous materials, remaining on the surface of the member in the processing chamber, by a thermochemical reaction.
申请公布号 KR101399177(B1) 申请公布日期 2014.05.27
申请号 KR20120102376 申请日期 2012.09.14
申请人 发明人
分类号 C23C16/44;H01L21/02;H01L21/31 主分类号 C23C16/44
代理机构 代理人
主权项
地址