APPARATUS FOR SELECTIVE WORD-LINE BOOST ON A MEMORY CELL

摘要

Systems and methods for selectively boosting word-line (WL) voltage in a memory cell array. The method relies several embodiments to minimize energy costs associated with WL boost scheme. One embodiment generates a transient voltage boost rather than supply a DC voltage boost. The transient boost generation may be controlled on a cycle basis and can be disabled when the array is not accessed. Another embodiment allows the system to generate the transient voltage boost locally, near a WL driver and only during the cycles when it is needed. Localized boost voltage generation reduces the load capacitance that needs to be boosted to higher voltage. Another embodiment efficiently distributes the transient boost to the WL drivers.