发明名称 |
Manufacturing optical MEMS with thin-film anti-reflective layers |
摘要 |
In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen. |
申请公布号 |
US8736936(B2) |
申请公布日期 |
2014.05.27 |
申请号 |
US201213437670 |
申请日期 |
2012.04.02 |
申请人 |
ATNIP EARL V.;MORRISON WILLIAM R.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ATNIP EARL V.;MORRISON WILLIAM R. |
分类号 |
G02B26/08 |
主分类号 |
G02B26/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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