发明名称 Manufacturing optical MEMS with thin-film anti-reflective layers
摘要 In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.
申请公布号 US8736936(B2) 申请公布日期 2014.05.27
申请号 US201213437670 申请日期 2012.04.02
申请人 ATNIP EARL V.;MORRISON WILLIAM R.;TEXAS INSTRUMENTS INCORPORATED 发明人 ATNIP EARL V.;MORRISON WILLIAM R.
分类号 G02B26/08 主分类号 G02B26/08
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