| 摘要 |
A variable-resistance material memory array includes a series of variable-resistance material memory cells. The series of variable-resistance material memory cells is in parallel with a corresponding series of control gates. A select gate is also in series with the variable-resistance material memory cells. Writing/reading/erasing to a given variable-resistance material memory cell includes turning off the corresponding control gate, while turning on all other control gates. Devices include the variable-resistance material memory array. |
