发明名称 Semiconductor device and method of fabricating the same
摘要 A semiconductor device includes active regions defined by a device isolation layer, gates disposed in the active regions of cell channel regions, word lines disposed on the gates and extending along a first direction, and gate contacts configured to connect the gates to the word lines. The gates have a box shape which extends over two active regions.
申请公布号 US8735977(B2) 申请公布日期 2014.05.27
申请号 US201213719109 申请日期 2012.12.18
申请人 SK HYNIX INC. 发明人 LEE DONG MIN
分类号 H01L29/66 主分类号 H01L29/66
代理机构 代理人
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