| 摘要 |
<p>The present invention relates to a thin film transistor substrate, a manufacturing method thereof, a display device using the same, and a manufacturing method thereof. The thin film transistor substrate includes an active layer which consists of oxide semiconductor and is formed on a substrate; a first conductive layer formed on one side of the active layer and a second conductive layer formed on the other side of the active layer; a gate insulating layer formed on the center part of the active layer; a gate electrode formed on the gate insulating layer; an interlayer dielectric which has a first contact hole to expose the first conductive layer and the second conductive layer and is formed in the entire surface of the substrate; and a source electrode which is connected to the first conductive layer through the first contact hole and a drain electrode which is connected to the second conductive layer through the first contact hole. According to the present invention, the first conductive layer and the second conductive layer are patterned on the active layer. Because the first conductive layer and the second conductive layer are connected to the source electrode and the drain electrode, electrons easily move between the source electrode and the drain electrode.</p> |
