| 摘要 |
Implementations of the present disclosure involve a circuit and/or method for providing a static random access memory (SRAM) component of a very large scale integration (VLSI) design, such as a microprocessor design. In particular, the present disclosure provides for an SRAM circuit that includes a step voltage regulator coupled to the SRAM circuit and designed to maintain a fixed-value voltage drop across the regulator rather than a fixed voltage across the load of the SRAM circuit. The fixed-value drop across the regulator allows the SRAM circuit to be operated at a low retention voltage to reduce leakage of the SRAM circuit while maintaining the parasitic decoupling capacitance across the power supply from the SRAM circuit to reduce power signal fluctuations. In addition, the regulator circuit coupled to the SRAM circuit may include a switch circuit to control the various states of the SRAM circuit. |
