PRODUCTION METHOD FOR SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND PRODUCTION METHOD FOR SOLID-STATE IMAGING ELEMENT

摘要

Provided are a semiconductor epitaxial wafer exhibiting increased gettering properties that enable metal contamination to be suppressed, a production method for the same, and a production method for a solid-state imaging element, said method using the semiconductor epitaxial wafer. In the present invention, the production method for the semiconductor epitaxial wafer (100) is characterized in that the method includes: a first step in which cluster ions (16) are irradiated on a semiconductor wafer (10) that contains at least one from carbon and nitrogen, so as to form, on a surface (10A) of the semiconductor wafer (10), a modifying layer (18) that is a solid solution of constituent elements of the cluster ions (16); and a second step in which a first epitaxial layer (20) is formed upon the modifying layer (18) of the semiconductor wafer (10).