SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates to a semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device. An aspect of the present invention provides the semiconductor light emitting device comprising a base layer made of a group III nitride semiconductor; a polarity modifying layer formed on a group III element polar face of the base layer; and a multi-layer structure of the group III nitride semiconductor, formed on the polarity modifying layer, wherein the top surface of at least one layer of the multi-layer structure contains a light emitting stack member consisting of N-polar surface.