发明名称 |
SEMICONDUCTOR DEVICES INCLUDING A STRESSOR IN A RECESS AND METHODS OF FORMING THE SAME |
摘要 |
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a trench in an active region and the trench may include a notched portion of the active region. The methods may also include forming an embedded stressor in the trench. The embedded stressor may include a lower semiconductor layer and an upper semiconductor layer, which has a width narrower than a width of the lower semiconductor layer. A side of the upper semiconductor layer may not be aligned with a side of the lower semiconductor layer and an uppermost surface of the upper semiconductor layer may be higher than an uppermost surface of the active region. |
申请公布号 |
US2014138745(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201314033718 |
申请日期 |
2013.09.23 |
申请人 |
SHIN DONG-SUK;KANG HYUN-CHUL;ROH DONG-HYUN;PARK PAN-KWI;SHIN GEO-MYUNG;LEE NAE-IN;LEE CHUL-WOONG;CHUNG HOI-SUNG;KIM YOUNG-TAK |
发明人 |
SHIN DONG-SUK;KANG HYUN-CHUL;ROH DONG-HYUN;PARK PAN-KWI;SHIN GEO-MYUNG;LEE NAE-IN;LEE CHUL-WOONG;CHUNG HOI-SUNG;KIM YOUNG-TAK |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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