STORING CONTAINER, STORING CONTAINER MANUFACTURING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

The present invention addresses the issue of providing a storing container wherein Si does not drop onto a single crystal SiC substrate, and Si pressure distribution in an internal space can be made uniform. This storing container stores therein a single crystal SiC substrate to be etched by means of heat treatment under Si vapor pressure. The storage container is formed of a tantalum metal, and has a tantalum carbide layer provided on the internal space side, and a tantalum silicide layer provided on the side further toward the internal space side than the tantalum carbide layer. The tantalum silicide layer supplies Si to the internal space. Furthermore, the tantalum silicide layer is different from adhered Si, and does not melt and drop.