发明名称 |
CONDUCTIVE OXIDE, OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a conductive oxide which is inexpensive and stably supplied and capable of forming an oxide semiconductor film having high carrier mobility, and to provide an oxide semiconductor film and a semiconductor device including an oxide semiconductor film.SOLUTION: The conductive oxide contains crystalline InAlZnO(m is 1 or more natural number) and crystalline ZnAlO. The oxide semiconductor film is formed by a sputtering method using such a conductive oxide as a target. The semiconductor device includes such an oxide semiconductor film. |
申请公布号 |
JP2014094862(A) |
申请公布日期 |
2014.05.22 |
申请号 |
JP20120247629 |
申请日期 |
2012.11.09 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
MIYANAGA YOSHINORI;SOGABE KOICHI;KURISU KENICHI;AWATA HIDEAKI |
分类号 |
C04B35/00;C01G15/00;C04B35/453;C23C14/34;H01B1/08;H01L21/336;H01L29/24;H01L29/786 |
主分类号 |
C04B35/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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