| 摘要 |
The present invention relates to an interconnection structure and a method for fabricating the same. According to the present invention, cavities are formed between the interconnection dielectric by using a sacrificial layer, carbon nanotubes are used as the interconnection material for local interconnection between via holes, graphene nanoribbons are used as the interconnection material for metal lines, and cavities are included in the interconnection dielectric. In addition, the conventional CMOS BEOL Cu interconnection technique is applied to the intermediate interconnection level and the global interconnection level. In this way, the high parasitic resistance and parasitic capacitance in the Cu interconnection technique, which may occur when the local interconnection is relatively small in size, can be effectively overcome. |
