发明名称 |
GaN-BASED SCHOTTKY DIODE HAVING DUAL METAL, PARTIALLY RECESSED ELECTRODE |
摘要 |
A semiconductor device includes a substrate, a first active layer disposed over the substrate and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A first electrode has a first portion disposed in a recess in the second active layer and a second portion disposed on the second active layer such that a Schottky junction is formed therewith. The first portion of the first electrode has a lower Schottky potential barrier than the second portion of the first electrode. A second electrode is in contact with the first active layer. The second electrode establishes an ohmic junction with the first active layer |
申请公布号 |
US2014138698(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201213678572 |
申请日期 |
2012.11.16 |
申请人 |
VISHAY GENERAL SEMICONDUCTOR LLC |
发明人 |
LIN YIH-YIN |
分类号 |
H01L29/872;H01L29/20;H01L29/66 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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