| 摘要 |
A metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) has a substrate in which an electron supply layer is interposed between an electron channel layer and the surface of the substrate. A pair of main electrodes are formed on the surface of the substrate. A recess is formed in the surface of the substrate between the main electrodes. A gate insulation film is formed on the surface of the substrate, at least between the first and second main electrodes, covering the inside walls and floor of the recess. A gate electrode is formed on the gate insulation film, filling in the recess. The gate insulation film has a crystal density of at least 2.9 g/cm3, which mitigates the reduction in threshold voltage caused by the recess.
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