发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device with a through via penetrating a semiconductor substrate, in which shorting between a wiring and a semiconductor element is prevented to improve the reliability of the semiconductor device. A liner insulating film as a low-k film, which has a function to insulate the semiconductor substrate and a through-silicon via from each other and is thick enough to reduce capacitance between the semiconductor substrate and the through-silicon via, is used as an interlayer insulating film for a first wiring layer over a contact layer. This prevents a decrease in the thickness of an interlayer insulating film in the contact layer.
申请公布号 US2014138848(A1) 申请公布日期 2014.05.22
申请号 US201314084155 申请日期 2013.11.19
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MATSUURA MASAZUMI
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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