METAL ALKOXIDE COMPOUND, THIN FILM-FORMING STARTING MATERIAL, METHOD FOR PRODUCING THIN FILM, AND ALCOHOL COMPOUND

摘要

The present invention provides a metal alkoxide compound which has physical properties suitable for a starting material for forming a thin film by a CVD method, in particular, a metal alkoxide compound which has physical properties suitable for a starting material for forming a copper metal thin film. The present invention specifically provides a metal alkoxide compound which is represented by general formula (I) and a thin film-forming starting material which contains the metal alkoxide compound. (In the formula, R1 represents a methyl group or an ethyl group; R2 represents a hydrogen atom or a methyl group; R3 represents a linear or branched alkyl group having 1-3 carbon atoms; M represents a metal atom or a silicon atom; and n represents the valence of the metal atom or the silicon atom.)