发明名称 |
POWER SEMICONDUCTOR MODULE |
摘要 |
A power semiconductor module is provided which is capable of keeping low the degrees of increases in temperatures of wide bandgap semiconductor elements, reducing the degree of increase in chip's total surface area of the wide bandgap semiconductor elements, and being fabricated at low costs, when Si semiconductor elements and the wide bandgap semiconductor elements are placed within one and the same power semiconductor module. The Si semiconductor elements are placed in a central region of the power semiconductor module, and the wide bandgap semiconductor elements are placed on opposite sides relative to the central region or in edge regions surrounding the central region. |
申请公布号 |
US2014138707(A1) |
申请公布日期 |
2014.05.22 |
申请号 |
US201214131581 |
申请日期 |
2012.07.05 |
申请人 |
MIKI TAKAYOSHI;NAKAYAMA YASUSHI;OI TAKESHI;TADA KAZUHIRO;IDAKA SHIORI;HASEGAWA SHIGERU;KOBAYASHI TOMOHIRO;NAKASHIMA YUKIO;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
MIKI TAKAYOSHI;NAKAYAMA YASUSHI;OI TAKESHI;TADA KAZUHIRO;IDAKA SHIORI;HASEGAWA SHIGERU;KOBAYASHI TOMOHIRO;NAKASHIMA YUKIO |
分类号 |
H01L25/18;H01L23/28 |
主分类号 |
H01L25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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