发明名称 PROGRAMMING A NON-VOLATILE MEMORY(NVM) SYSTEM HAVING ERROR CORRECTION CODE(ECC)
摘要 <p>A method to program a non-volatile memory device (50) includes a step of determining a plurality of bit cells that are failed to be verified during program operation (60). The bit cells are included in a subset of the bit cells in an array of the bit cells. The method determines whether the correction of an error correction code (ECC) is executed in advance to the subset of the bit cells (74). The program operation is treated as success when the correction of the ECC is not executed to the subset of the bit cells (78) and the number of the bit cells that are failed to be verified is lower than a threshold value after a predetermined number of program pulses.</p>
申请公布号 KR20140061265(A) 申请公布日期 2014.05.21
申请号 KR20130136426 申请日期 2013.11.11
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MU FUCHEN;HE CHEN
分类号 G11C29/42;G11C16/10;G11C16/34 主分类号 G11C29/42
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