| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-resistant hexagonal boron nitride structure whose crystal structure is not deteriorated and a method for heat-treating the same. SOLUTION: This hexagonal boron nitride structure includes an insulating substrate 11 and a single crystal hexagonal boron nitride 12 formed on the insulating substrate and contains silicon, magnesium, beryllium or sulfur as an impurity with its doping concentration in the range from 1×10<SP POS="POST">16</SP>to 1×10<SP POS="POST">20</SP>cm<SP POS="POST">-3</SP>. The single crystal hexagonal boron nitride may be heat-treated at a substrate temperature of not lower than 900°C. COPYRIGHT: (C)2012,JPO&INPIT |
