| 摘要 |
An ultrasound element 20 includes a silicon substrate 11, a lower electrode layer 12 that has a plurality of lower electrode sections 12A, and a plurality of lower wiring sections 12B, and is connected to a lower electrode terminal 52 to which a drive signal and a bias signal are applied, a lower insulating layer 13, an upper insulating layer 15 in which a plurality of cavities 14 smaller than the respective lower electrode sections 12A are formed, an upper electrode layer 16 that has a plurality of upper electrode sections 16A that are disposed to face the respective lower electrode sections 12A via the respective cavities 14, and are smaller than the lower electrode sections 12A and larger than the cavities 14, and a plurality of upper wiring sections 16B, and is connected to an upper electrode terminal 51 at a ground potential that detects a capacitance signal, and a protection layer 17. |
