| 摘要 |
The invention relates to a method for producing hexachlorodisilane or Ge2CI6, which is characterized in that, in a gas containing SiCI4 or GeCI4, a) a non-thermal plasma is generated by means of an alternating voltage of the frequency f, and wherein at least one electromagnetic pulse having the repetition rate g is coupled into the plasma, the voltage component of which pulse has an edge steepness in the rising edge of 10 V ns-1 to 1 kV ns-1 and a pulse width b of 500 ns to 100 μs, wherein a liquid phase is obtained, and b) pure hexachlorodisilane or Ge2Cl6 is obtained from the liquid phase. |
