发明名称 Heat transfer element and device for thermal treatment of substrates
摘要 The flat-shaped heatable heat transfer element (52) for a plant for the heat treatment of a semiconductor substrate (12), comprises two membranes (60) formed by mats made of heat-shock-resistant fibers, which remain stable at 1000[deg] C and run parallel to a surface (62), in which the mat extends. The plant comprises a substrate reception chamber (30) and the heat transfer element is arranged on a side of the substrate reception chamber, in which the substrate is heatable in a contactless manner. The mat comprises a fabric made of the fibers and a fiber layer, and has a thickness of 0.07-0.5 mm. The flat-shaped heatable heat transfer element (52) for a plant for the heat treatment of a semiconductor substrate (12), comprises two membranes (60) formed by mats made of heat-shock-resistant fibers, which remain stable at 1000[deg] C and run parallel to a surface (62), in which the mat extends. The plant comprises a substrate reception chamber (30) and the heat transfer element is arranged on a side of the substrate reception chamber, in which the substrate is heatable in a contactless manner. The mat comprises a fabric made of the fibers and a fiber layer, and has a thickness of 0.07-0.5 mm. The mat is formed from a fiber composite material. The fibers are connected by a matrix. The material of the matrix is ceramic or carbon. The fibers comprise carbon fibers, ceramic fibers and silicon carbide fibers. The membrane comprises a coating (76) on its front side turned to the substrate and another coating (74) on its back side turned to the substrate. The coating (74, 76) is produced by plasma spraying, plasma vapor deposition, chemical vapor deposition or chemical vapor infiltration process. The coating has a thickness of 100-3000Å . The membrane comprises passage openings and has a porosity of 3-50%. A flow cross section of the passage openings is larger in a central area of the membrane than an external area of the membrane. A membrane element comprises a membrane carrier, which has a thermal expansion that corresponds to thermal expansion of the membrane. The membrane is fixed at the membrane carrier with pre-load, is connected with the membrane carrier in a material fit and is tightly held at the membrane carrier, which comprises two annular elements arranged radially with one another with a pretensioning force. The membrane is clamped between the annular elements, which comprise a thermal expansion behavior in a thermal treatment range. The membrane carrier is formed from a fiber composite material, which comprises fibers running parallel to a radius, a fiber fabric and a fabric layer. The membranes are arranged relative to each other with a gap. An independent claim is included for a plant for the thermal treatment of semiconductor substrates.
申请公布号 EP2058841(B1) 申请公布日期 2014.05.21
申请号 EP20080167941 申请日期 2008.10.30
申请人 DEUTSCHES ZENTRUM FÜR LUFT- UND RAUMFAHRT E.V. 发明人 DR. HALD, HERMANN;DR. FUNK, KLAUS;HEIDENREICH, BERNHARD
分类号 H01L21/67;H01L21/324 主分类号 H01L21/67
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