发明名称 |
Semiconductor substrate and method for manufacturing the same |
摘要 |
Provided is a semiconductor substrate and a method for manufacturing the same. The semiconductor substrate includes a substrate, a discontinuously formed hemispheric metal layer on the substrate, and a semiconductor layer on the hemispheric metal layer. A plurality of voids on the interface of the substrate and discontinuous hemisphere are formed to absorb or relax the stain of interface. Accordingly, even if a subsequent layer is relatively thickly formed on the substrate, substrate bow or warpage can be minimized. |
申请公布号 |
US8729670(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US20090935978 |
申请日期 |
2009.04.15 |
申请人 |
LEE HAE YONG;CHOI YOUNG JUN;KIM JUNG GYU;LUMIGNTECH CO., LTD. |
发明人 |
LEE HAE YONG;CHOI YOUNG JUN;KIM JUNG GYU |
分类号 |
H01L21/20;H01L29/20;H01L33/00;H01L33/12 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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