| 发明名称 |
Method of making bulk InGaN substrates and devices thereon |
| 摘要 |
A relaxed epitaxial AlxInyGa(1-x-y)N layer on a substrate having a semipolar surface orientation includes a plurality of misfit dislocations in portions of the thickness of the epitaxial layer to reduce bi-axial strain to a relaxed state. |
| 申请公布号 |
US8729559(B2) |
申请公布日期 |
2014.05.20 |
| 申请号 |
US201113272981 |
申请日期 |
2011.10.13 |
| 申请人 |
KRAMES MIKE;D'EVELYN MARK;PAKALAPATI RAJEEV;ALEXANDER ALEX;KAMBER DERRICK;SORAA, INC. |
发明人 |
KRAMES MIKE;D'EVELYN MARK;PAKALAPATI RAJEEV;ALEXANDER ALEX;KAMBER DERRICK |
| 分类号 |
H01L29/15;H01L21/31;H01L29/06;H01L33/00 |
主分类号 |
H01L29/15 |
| 代理机构 |
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