发明名称 |
Copper seed layer for an interconnect structure having a doping concentration level gradient |
摘要 |
A trench is opened in a dielectric layer. The trench is then lined with a barrier layer and a metal seed layer. The metal seed layer is non-uniformly doped and exhibits a vertical doping gradient varying as a function of trench depth. The lined trench is then filled with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the non-uniformly doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap. |
申请公布号 |
US8729702(B1) |
申请公布日期 |
2014.05.20 |
申请号 |
US201213682162 |
申请日期 |
2012.11.20 |
申请人 |
STMICROELECTRONICS, INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NIU CHENGYU;SIMON ANDREW;WONG KEITH KWONG HON;WANG YUN-YU |
分类号 |
H01L23/40;C23C14/00;H01L21/82 |
主分类号 |
H01L23/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|