发明名称 |
Semiconductor device having a plurality of fins with different heights and method for manufacturing the same |
摘要 |
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: a semiconductor layer comprising a plurality of semiconductor sub-layers; and a plurality of fins formed in the semiconductor layer and adjoining the semiconductor layer, wherein at least two of the plurality of fins comprise different numbers of the semiconductor sub-layers and have different heights. According to the present disclosure, a plurality of semiconductor devices with different dimensions and different driving abilities can be integrated on a single wafer. |
申请公布号 |
US8729611(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113503693 |
申请日期 |
2011.11.18 |
申请人 |
ZHU HUILONG;YIN HAIZHOU;LUO ZHIJIONG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHU HUILONG;YIN HAIZHOU;LUO ZHIJIONG |
分类号 |
H01L27/088 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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