发明名称 |
Systems and methods for producing flat surfaces in interconnect structures |
摘要 |
Methods and apparatus for forming a semiconductor device are provided which may include any number of features. One feature is a method of forming an interconnect structure that results in the interconnect structure having a co-planar or flat top surface. Another feature is a method of forming an interconnect structure that results in the interconnect structure having a surface that is angled upwards greater than zero with respect to a top surface of the substrate. The interconnect structure can comprise a damascene structure, such as a single or dual damascene structure, or alternatively, can comprise a silicon-through via (TSV) structure. |
申请公布号 |
US8728934(B2) |
申请公布日期 |
2014.05.20 |
申请号 |
US201113168839 |
申请日期 |
2011.06.24 |
申请人 |
UZOH CYPRIAN;OGANESIAN VAGE;MOHAMMED ILYAS;TESSERA, INC. |
发明人 |
UZOH CYPRIAN;OGANESIAN VAGE;MOHAMMED ILYAS |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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